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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION With TO-220F package Complement to type 2SD2495 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature SEM GE Open base OND IC TOR UC VALUE -110 -110 -5 -6 -1 UNIT V V V A A W ae ae Open collector TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A; IB=-5mA IC=-5A; IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V f=1MHz;VCB=-10V 5000 100 110 MIN -110 2SB1626 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -2.5 -3.0 -0.1 -0.1 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time ANG CH p 6500-20000 hFE Classifications O 5000-12000 Y 15000-30000 IN EMIC ES IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6| OND TOR UC 1.1 |I 3.2 1.1 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1626 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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